Abstract
The unusual charge gap in FeSi is investigated using Raman scattering. These studies reveal (i) a rapid suppression of low-frequency (<760 cm-1) electronic scattering below ∼250 K, (ii) a redistribution of low-frequency electronic scattering strength to interband transitions near Δ0∼1200 cm-1, and (iii) a dramatic decrease in phonon linewidths below 250 K, indicating a strong coupling between low-frequency charge excitations and the lattice in FeSi.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 15626-15629 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 51 |
| Issue number | 21 |
| DOIs | |
| State | Published - 1995 |
ASJC Scopus subject areas
- Condensed Matter Physics