Electronic properties of InAs/GaAs self-assembled quantum dots: Beyond the effective mass approximation

The electronic properties of InAs/GaAs self-assembled quantum dots (SAD) are investigated as a function of their shapes, sizes and stoichiometric compositions with an eight-band k · p method. Emphasis is placed on the three-dimensional strain distribution, which is obtained by minimizing the strain energy around the dot region, and the piezoelectric potential, which is calculated by solving the corresponding Poisson equation. Novel features of intraband and interband optical transitions are presented and discussed in relation with the 3D SAD k · p band structure, and their response to external electric fields. Finally, particular attention is paid to the quantum Stark effect in vertically coupled lens-shaped SADs.