Electronic properties of InAs/GaAs self-assembled quantum dots: Beyond the effective mass approximation

Weidong Sheng, Jean Pierre Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

The electronic properties of InAs/GaAs self-assembled quantum dots (SAD) are investigated as a function of their shapes, sizes and stoichiometric compositions with an eight-band k · p method. Emphasis is placed on the three-dimensional strain distribution, which is obtained by minimizing the strain energy around the dot region, and the piezoelectric potential, which is calculated by solving the corresponding Poisson equation. Novel features of intraband and interband optical transitions are presented and discussed in relation with the 3D SAD k · p band structure, and their response to external electric fields. Finally, particular attention is paid to the quantum Stark effect in vertically coupled lens-shaped SADs.

Original languageEnglish (US)
Pages (from-to)394-404
Number of pages11
JournalPhysica Status Solidi (B) Basic Research
Volume237
Issue number1
DOIs
StatePublished - May 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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