Electronic Properties and Mid-Infrared Transitions in Self-Assembled Quantum Dots

Jean Pierre Leburton, Leornado R.C. Fonseca, John Shumway, David Ceperley, Richard M. Martin

Research output: Contribution to journalConference article

Abstract

We present a detailed model of the electronic properties of single and vertically aligned self-assembled pyramidal InAs/GaAs quantum dots (SADs) which is based on the self-consistent solution of three-dimensional (3D) Poisson and Schroedinger equations within the local (spin) density approximation. Nonparabolicity of the band structure and a continuum model for strain between GaAs and InAs results in position and energy dependent effective mass. In single SADs, shell structures obeying Hund's rule for various occupation numbers in the pyramids agree well with recent capacitance measurements. The electronic spectra of SADs of various shapes have been determined with intraband level transitions and mid-infrared optical matrix elements. In the case of two vertically aligned pyramidal SADs, we show that quantum mechanical coupling alone between identical dots underestimates the magnitude of the coupling between the dots, which in large part is due to piezoelectricity and size difference between SADs.

Original languageEnglish (US)
Pages (from-to)357-365
Number of pages9
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number1 B
DOIs
StatePublished - Jan 1 1999
EventProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
Duration: May 31 1998Jun 4 1998

Keywords

  • Nanostructures
  • Quantum dots
  • Shell structures
  • Single-electron charging

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Engineering(all)

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