Electronic coupling in InAs/GaAs self-assembled stacked double-quantum-dot systems

L. Fonseca, J. Jimenez, J. Leburton

Research output: Contribution to journalArticlepeer-review


We have studied level splitting in systems consisting of two vertically aligned pyramidal InAs quantum dots embedded in GaAs. We have calculated and analyzed separately the contributions of the different effects that contribute to level splitting. First, we have shown that a simplified model considering only quantum-mechanical coupling between identical dots leads to significant level splitting only for a tip-to-base separation of less than 50 Å. Then we added the effects of piezoelectricity and size difference between the two stacked dots to show that the resulting level splitting is considerably stronger than in the first model and could, in principle, be measured for much larger dot separations.

Original languageEnglish (US)
Pages (from-to)9955-9960
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
StatePublished - 1998

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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