Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

M. Wang; W. He; T. P. Ma; L. F. Edge; D. G. Schlom

doi:10.1063/1.2437128

Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO₃ and LaScO₃

M. Wang, W. He, T. P. Ma, L. F. Edge, D. G. Schlom

Research output: Contribution to journal › Article › peer-review

Abstract

Electron tunneling spectroscopy (ETS) was used to study amorphous LaAl O3 and LaSc O3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAl O3 and LaSc O3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAl O3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.

Original language	English (US)
Article number	053502
Journal	Applied Physics Letters
Volume	90
Issue number	5
DOIs	https://doi.org/10.1063/1.2437128
State	Published - 2007
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2437128

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title = "Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3",

abstract = "Electron tunneling spectroscopy (ETS) was used to study amorphous LaAl O3 and LaSc O3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAl O3 and LaSc O3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAl O3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.",

author = "M. Wang and W. He and Ma, {T. P.} and Edge, {L. F.} and Schlom, {D. G.}",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Semiconductor Research Corporation (SRC) and SEMATECH through the SRC/SEMATECH FEP Center. One of the authors (L.F.E.) gratefully acknowledges an AMD/SRC fellowship, and (M.W.) gratefully acknowledges partial support from the National Science Foundation under Contract No. MRSEC DMR 0520495. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

year = "2007",

doi = "10.1063/1.2437128",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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T1 - Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

AU - Wang, M.

AU - He, W.

AU - Ma, T. P.

AU - Edge, L. F.

AU - Schlom, D. G.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Semiconductor Research Corporation (SRC) and SEMATECH through the SRC/SEMATECH FEP Center. One of the authors (L.F.E.) gratefully acknowledges an AMD/SRC fellowship, and (M.W.) gratefully acknowledges partial support from the National Science Foundation under Contract No. MRSEC DMR 0520495. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

PY - 2007

Y1 - 2007

N2 - Electron tunneling spectroscopy (ETS) was used to study amorphous LaAl O3 and LaSc O3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAl O3 and LaSc O3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAl O3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.

AB - Electron tunneling spectroscopy (ETS) was used to study amorphous LaAl O3 and LaSc O3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAl O3 and LaSc O3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAl O3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.

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Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO₃ and LaScO₃

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