Electron tunneling spectroscopy study of amorphous films of the gate dielectric candidates LaAlO3 and LaScO3

M. Wang, W. He, T. P. Ma, L. F. Edge, D. G. Schlom

Research output: Contribution to journalArticlepeer-review

Abstract

Electron tunneling spectroscopy (ETS) was used to study amorphous LaAl O3 and LaSc O3 thin film gate dielectrics for silicon metal-oxide-semiconductor structure. These gate dielectrics were prepared by molecular-beam deposition on (100) Si substrates. The authors have obtained vibrational modes for amorphous LaAl O3 and LaSc O3 thin films from the ETS spectra, which provide information about the chemical bonding in these films and the interface with silicon. Traps and defects in amorphous LaAl O3 thin films are revealed in the ETS spectra, and their physical locations and energy levels are identified.

Original languageEnglish (US)
Article number053502
JournalApplied Physics Letters
Volume90
Issue number5
DOIs
StatePublished - Feb 19 2007
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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