TY - GEN
T1 - Electromigration in Cu/Sn-58Bi/Cu interconnects
AU - Yang, Q. L.
AU - Guo, J. D.
AU - Shang, J. K.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 × 104A/cm2, 95°C for 60hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.
AB - The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 × 104A/cm2, 95°C for 60hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.
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U2 - 10.1109/ICEPT.2007.4441518
DO - 10.1109/ICEPT.2007.4441518
M3 - Conference contribution
AN - SCOPUS:50249185528
SN - 1424413923
SN - 9781424413928
T3 - Proceedings of the Electronic Packaging Technology Conference, EPTC
BT - Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT
T2 - 2007 8th International Conference on Electronic Packaging Technology, ICEPT
Y2 - 14 August 2007 through 17 August 2007
ER -