Electromigration in Cu/Sn-58Bi/Cu interconnects

Q. L. Yang, J. D. Guo, J. K. Shang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 × 104A/cm2, 95°C for 60hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.

Original languageEnglish (US)
Title of host publicationProceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT
DOIs
StatePublished - Dec 1 2007
Event2007 8th International Conference on Electronic Packaging Technology, ICEPT - Shanghai, China
Duration: Aug 14 2007Aug 17 2007

Publication series

NameProceedings of the Electronic Packaging Technology Conference, EPTC

Other

Other2007 8th International Conference on Electronic Packaging Technology, ICEPT
CountryChina
CityShanghai
Period8/14/078/17/07

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Yang, Q. L., Guo, J. D., & Shang, J. K. (2007). Electromigration in Cu/Sn-58Bi/Cu interconnects. In Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT [4441518] (Proceedings of the Electronic Packaging Technology Conference, EPTC). https://doi.org/10.1109/ICEPT.2007.4441518