Abstract
The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 × 104A/cm2, 95°C for 60hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.
| Original language | English (US) |
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| Title of host publication | Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT |
| DOIs | |
| State | Published - Dec 1 2007 |
| Event | 2007 8th International Conference on Electronic Packaging Technology, ICEPT - Shanghai, China Duration: Aug 14 2007 → Aug 17 2007 |
Publication series
| Name | Proceedings of the Electronic Packaging Technology Conference, EPTC |
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Other
| Other | 2007 8th International Conference on Electronic Packaging Technology, ICEPT |
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| Country | China |
| City | Shanghai |
| Period | 8/14/07 → 8/17/07 |
ASJC Scopus subject areas
- Engineering(all)
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Cite this
Yang, Q. L., Guo, J. D., & Shang, J. K. (2007). Electromigration in Cu/Sn-58Bi/Cu interconnects. In Proceedings of the 2007 8th International Conference on Electronic Packaging Technology, ICEPT [4441518] (Proceedings of the Electronic Packaging Technology Conference, EPTC). https://doi.org/10.1109/ICEPT.2007.4441518