TY - GEN
T1 - Electromigration behavior of the Ni/SnZn/Cu solder interconnect
AU - Zhang, X. F.
AU - Guo, J. D.
AU - Shang, J. K.
PY - 2008
Y1 - 2008
N2 - Electromigration in the Ni/SnZn/Cu solder interconnect was studied with an average current density of 4.1×104A/cm2 for 168.5h at 150°C When the electrons flowed from the Ni side to the Cu side, uniform layers of Ni5Zn21 and Cu5Zn8 were formed at the Ni/SnZn and Cu/SnZn interfaces. The results are similar to those without passage of an electric current. However, upon reversing the current direction where electron flow was from the Cu side to the Ni side, thicker Cu6Sn5 phase replaced Ni5Zn21 phase at the Ni/SnZn interface, whereas at the Cu/SnZn interface, thicker β-CuZn phase replaced Cu5Zn8 phase. Meanwhile, Cu-Sn phases also appeared at the Cu/SnZn interface. A kinetic model, based on the Zn and Cu mass transport in the sample, was presented to explain the growth of the intermetallic compound at the anode and cathode.
AB - Electromigration in the Ni/SnZn/Cu solder interconnect was studied with an average current density of 4.1×104A/cm2 for 168.5h at 150°C When the electrons flowed from the Ni side to the Cu side, uniform layers of Ni5Zn21 and Cu5Zn8 were formed at the Ni/SnZn and Cu/SnZn interfaces. The results are similar to those without passage of an electric current. However, upon reversing the current direction where electron flow was from the Cu side to the Ni side, thicker Cu6Sn5 phase replaced Ni5Zn21 phase at the Ni/SnZn interface, whereas at the Cu/SnZn interface, thicker β-CuZn phase replaced Cu5Zn8 phase. Meanwhile, Cu-Sn phases also appeared at the Cu/SnZn interface. A kinetic model, based on the Zn and Cu mass transport in the sample, was presented to explain the growth of the intermetallic compound at the anode and cathode.
UR - https://www.scopus.com/pages/publications/52449129833
UR - https://www.scopus.com/pages/publications/52449129833#tab=citedBy
U2 - 10.1109/ICEPT.2008.4607115
DO - 10.1109/ICEPT.2008.4607115
M3 - Conference contribution
AN - SCOPUS:52449129833
SN - 9781424427406
T3 - Proceedings, 2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008
BT - Proceedings, 2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008
T2 - 2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008
Y2 - 28 July 2008 through 31 July 2008
ER -