Electromigration behavior of the Ni/SnZn/Cu solder interconnect

X. F. Zhang, J. D. Guo, J. K. Shang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electromigration in the Ni/SnZn/Cu solder interconnect was studied with an average current density of 4.1×104A/cm2 for 168.5h at 150°C When the electrons flowed from the Ni side to the Cu side, uniform layers of Ni5Zn21 and Cu5Zn8 were formed at the Ni/SnZn and Cu/SnZn interfaces. The results are similar to those without passage of an electric current. However, upon reversing the current direction where electron flow was from the Cu side to the Ni side, thicker Cu6Sn5 phase replaced Ni5Zn21 phase at the Ni/SnZn interface, whereas at the Cu/SnZn interface, thicker β-CuZn phase replaced Cu5Zn8 phase. Meanwhile, Cu-Sn phases also appeared at the Cu/SnZn interface. A kinetic model, based on the Zn and Cu mass transport in the sample, was presented to explain the growth of the intermetallic compound at the anode and cathode.

Original languageEnglish (US)
Title of host publicationProceedings, 2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008
DOIs
StatePublished - 2008
Externally publishedYes
Event2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008 - Pudong, Shanghai, China
Duration: Jul 28 2008Jul 31 2008

Publication series

NameProceedings, 2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008

Other

Other2008 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2008
Country/TerritoryChina
CityPudong, Shanghai
Period7/28/087/31/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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