@inproceedings{e7e0647570d1410b8fae8f3f7212efae,
title = "Electromagnetic field modeling for defect detection in 7 nm node patterned wafers",
abstract = "By 2017, the critical dimension in patterned wafers will shrink down to 7 nm, which brings great challenges to optics-based defect inspection techniques, due to the ever-decreasing signal to noise ratio with respect to defect size. To continue pushing forward the optics-based metrology technique, it is of great importance to analyze the full characteristics of the scattering field of a wafer with a defect and then to find the most sensitive signal type. In this article, the vector boundary element method is firstly introduced to calculate the scattering field of a patterned wafer at a specific objective plane, after which a vector imaging theory is introduced to calculate the field at an image plane for an imaging system with a high numerical aperture objective lens. The above methods enable the effective modeling of the image for an arbitrary vectorial scattering electromagnetic field coming from the defect pattern of the wafer.",
keywords = "Boundary element method, Defect inspection, Electromagnetic field modeling",
author = "Jinlong Zhu and Kedi Zhang and Nima Davoudzadeh and Xiaozhen Wang and Goddard, {Lynford L.}",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE.; 30th Conference on Metrology, Inspection, and Process Control for Microlithography ; Conference date: 22-02-2016 Through 25-02-2016",
year = "2016",
doi = "10.1117/12.2218979",
language = "English (US)",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Sanchez, {Martha I.} and Ukraintsev, {Vladimir A.}",
booktitle = "Metrology, Inspection, and Process Control for Microlithography XXX",
}