Electromagnetic field modeling for defect detection in 7 nm node patterned wafers

Jinlong Zhu, Kedi Zhang, Nima Davoudzadeh, Xiaozhen Wang, Lynford L. Goddard

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

By 2017, the critical dimension in patterned wafers will shrink down to 7 nm, which brings great challenges to optics-based defect inspection techniques, due to the ever-decreasing signal to noise ratio with respect to defect size. To continue pushing forward the optics-based metrology technique, it is of great importance to analyze the full characteristics of the scattering field of a wafer with a defect and then to find the most sensitive signal type. In this article, the vector boundary element method is firstly introduced to calculate the scattering field of a patterned wafer at a specific objective plane, after which a vector imaging theory is introduced to calculate the field at an image plane for an imaging system with a high numerical aperture objective lens. The above methods enable the effective modeling of the image for an arbitrary vectorial scattering electromagnetic field coming from the defect pattern of the wafer.

Original languageEnglish (US)
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XXX
EditorsMartha I. Sanchez, Vladimir A. Ukraintsev
PublisherSPIE
ISBN (Electronic)9781510600133
DOIs
StatePublished - Jan 1 2016
Event30th Conference on Metrology, Inspection, and Process Control for Microlithography - San Jose, United States
Duration: Feb 22 2016Feb 25 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9778
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Other

Other30th Conference on Metrology, Inspection, and Process Control for Microlithography
CountryUnited States
CitySan Jose
Period2/22/162/25/16

Fingerprint

Defect Detection
Wafer
Electromagnetic fields
Electromagnetic Fields
electromagnetic fields
wafers
Defects
defects
Scattering
Vertex of a graph
Modeling
Optics
scattering
optics
Defect Inspection
Calculate
pushing
boundary element method
Critical Dimension
numerical aperture

Keywords

  • Boundary element method
  • Defect inspection
  • Electromagnetic field modeling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Zhu, J., Zhang, K., Davoudzadeh, N., Wang, X., & Goddard, L. L. (2016). Electromagnetic field modeling for defect detection in 7 nm node patterned wafers. In M. I. Sanchez, & V. A. Ukraintsev (Eds.), Metrology, Inspection, and Process Control for Microlithography XXX [97780P] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9778). SPIE. https://doi.org/10.1117/12.2218979

Electromagnetic field modeling for defect detection in 7 nm node patterned wafers. / Zhu, Jinlong; Zhang, Kedi; Davoudzadeh, Nima; Wang, Xiaozhen; Goddard, Lynford L.

Metrology, Inspection, and Process Control for Microlithography XXX. ed. / Martha I. Sanchez; Vladimir A. Ukraintsev. SPIE, 2016. 97780P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9778).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhu, J, Zhang, K, Davoudzadeh, N, Wang, X & Goddard, LL 2016, Electromagnetic field modeling for defect detection in 7 nm node patterned wafers. in MI Sanchez & VA Ukraintsev (eds), Metrology, Inspection, and Process Control for Microlithography XXX., 97780P, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9778, SPIE, 30th Conference on Metrology, Inspection, and Process Control for Microlithography, San Jose, United States, 2/22/16. https://doi.org/10.1117/12.2218979
Zhu J, Zhang K, Davoudzadeh N, Wang X, Goddard LL. Electromagnetic field modeling for defect detection in 7 nm node patterned wafers. In Sanchez MI, Ukraintsev VA, editors, Metrology, Inspection, and Process Control for Microlithography XXX. SPIE. 2016. 97780P. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2218979
Zhu, Jinlong ; Zhang, Kedi ; Davoudzadeh, Nima ; Wang, Xiaozhen ; Goddard, Lynford L. / Electromagnetic field modeling for defect detection in 7 nm node patterned wafers. Metrology, Inspection, and Process Control for Microlithography XXX. editor / Martha I. Sanchez ; Vladimir A. Ukraintsev. SPIE, 2016. (Proceedings of SPIE - The International Society for Optical Engineering).
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