Electroluminescence from quantum dots fabricated with nanosphere lithography

L. Yu, S. Law, D. Wasserman

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate strong carrier confinement in, and electroluminescence (EL) from, quantum nanostructures fabricated from epitaxially grown quantum wells (QWs) using a top-down nanosphere lithography, dry-etch, mass-transport, and overgrowth fabrication process. Optically active nano-pillars with diameters as small as 90 nm are fabricated, and narrow linewidth (18 meV) electroluminescence from a fabricated diode structure is observed, with an emission blue-shift of over 37 meV from the original quantum well sample luminescence. The results presented offer the potential for low-cost, large-area patterning of quantum nanostructures for optoelectronic applications.

Original languageEnglish (US)
Article number103105
JournalApplied Physics Letters
Volume101
Issue number10
DOIs
StatePublished - Sep 3 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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