Electroabsorption properties of a single GaAs quantum well

C. M. Herzinger, P. D. Swanson, T. K. Tang, T. M. Cockerill, L. M. Miller, M. E. Givens, T. A. Detemple, J. J. Coleman, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

Data are presented on the electroabsorption spectra of a single 10-nm GaAs quantum well bounded within Al0.2Ga0.8As under conditions for which the excitonic features are unresolved. Over an electric-field range of 100 500 kV/cm, the spectra are bounded by two- and three-dimensional electroabsorption limits. The three-dimensional limit occurs because of strong tunnel coupling to the continuum states, resulting in lifetime broadening of the transitions. Model studies using the one-electron-overlap-integral picture confirm this behavior and predict absorption coefficients and spectra in reasonable agreement with the data. Estimates of the high-field lifetime suggest that use of this mechanism for a practical modulator would reduce some of the intensity and recovery-time limitations of traditional exciton-based modulators.

Original languageEnglish (US)
Pages (from-to)13478-13486
Number of pages9
JournalPhysical Review B
Volume44
Issue number24
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Condensed Matter Physics

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