Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs)

Jason P. Jones; Matthew R. Rosenberger; William P. King; Rama Vetury; Eric Heller; Donald Dorsey; Samuel Graham

doi:10.1109/ITHERM.2014.6892385

Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs)

Jason P. Jones, Matthew R. Rosenberger, William P. King, Rama Vetury, Eric Heller, Donald Dorsey, Samuel Graham

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we present a coupled small-scale electro-thermal model for characterizing AlGaN/GaN HEMTs under direct current (DC) and alternating current (AC) power conditions for various duty cycles. The calculated electrostatic potential and internal heat generation data are then used in a large-scale mechanics model to determine the development of stress due to the inverse piezoelectric and thermal expansion effects. The electrical characteristics of the modeled device were compared to experimental measurements for validation as well as existing simulation data from literature. The results show that the operating conditions (bias applied and AC duty cycle) strongly impact the temperature within the device and the stress fluctuations during cyclic pulsing conditions. The peak stress from the inverse piezoelectric effect develops rapidly with applied bias and slowly relaxes as the joule heating increases the device temperature during the on state of the pulse leading to cyclic stresses in operation of AlGaN/GaN HEMTs.

Original language	English (US)
Title of host publication	Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	959-965
Number of pages	7
ISBN (Electronic)	9781479952670
DOIs	https://doi.org/10.1109/ITHERM.2014.6892385
State	Published - Sep 4 2014
Event	14th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2014 - Orlando, United States Duration: May 27 2014 → May 30 2014

Publication series

Name	Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference

Other

Other	14th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2014
Country/Territory	United States
City	Orlando
Period	5/27/14 → 5/30/14

Keywords

AlGaN/GaN HEMTs
electro-thermo-mechanical simulation
pulsed devices
transient

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Online availability

10.1109/ITHERM.2014.6892385

Library availability

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Jones, J. P., Rosenberger, M. R., King, W. P., Vetury, R., Heller, E., Dorsey, D., & Graham, S. (2014). Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs). In Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference (pp. 959-965). Article 6892385 (Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ITHERM.2014.6892385

Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs). / Jones, Jason P.; Rosenberger, Matthew R.; King, William P. et al.
Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 959-965 6892385 (Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jones, JP, Rosenberger, MR, King, WP, Vetury, R, Heller, E, Dorsey, D & Graham, S 2014, Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs). in Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference., 6892385, Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference, Institute of Electrical and Electronics Engineers Inc., pp. 959-965, 14th InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITherm 2014, Orlando, United States, 5/27/14. https://doi.org/10.1109/ITHERM.2014.6892385

Jones JP, Rosenberger MR, King WP, Vetury R, Heller E, Dorsey D et al. Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs). In Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 959-965. 6892385. (Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference). doi: 10.1109/ITHERM.2014.6892385

Jones, Jason P. ; Rosenberger, Matthew R. ; King, William P. et al. / Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs). Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 959-965 (Thermomechanical Phenomena in Electronic Systems -Proceedings of the Intersociety Conference).

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abstract = "In this paper, we present a coupled small-scale electro-thermal model for characterizing AlGaN/GaN HEMTs under direct current (DC) and alternating current (AC) power conditions for various duty cycles. The calculated electrostatic potential and internal heat generation data are then used in a large-scale mechanics model to determine the development of stress due to the inverse piezoelectric and thermal expansion effects. The electrical characteristics of the modeled device were compared to experimental measurements for validation as well as existing simulation data from literature. The results show that the operating conditions (bias applied and AC duty cycle) strongly impact the temperature within the device and the stress fluctuations during cyclic pulsing conditions. The peak stress from the inverse piezoelectric effect develops rapidly with applied bias and slowly relaxes as the joule heating increases the device temperature during the on state of the pulse leading to cyclic stresses in operation of AlGaN/GaN HEMTs.",

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AU - King, William P.

AU - Vetury, Rama

AU - Heller, Eric

AU - Dorsey, Donald

AU - Graham, Samuel

PY - 2014/9/4

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AB - In this paper, we present a coupled small-scale electro-thermal model for characterizing AlGaN/GaN HEMTs under direct current (DC) and alternating current (AC) power conditions for various duty cycles. The calculated electrostatic potential and internal heat generation data are then used in a large-scale mechanics model to determine the development of stress due to the inverse piezoelectric and thermal expansion effects. The electrical characteristics of the modeled device were compared to experimental measurements for validation as well as existing simulation data from literature. The results show that the operating conditions (bias applied and AC duty cycle) strongly impact the temperature within the device and the stress fluctuations during cyclic pulsing conditions. The peak stress from the inverse piezoelectric effect develops rapidly with applied bias and slowly relaxes as the joule heating increases the device temperature during the on state of the pulse leading to cyclic stresses in operation of AlGaN/GaN HEMTs.

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KW - electro-thermo-mechanical simulation

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Electro-thermo-mechanical transient modeling of stress development in AlGaN/GaN high electron mobility transistors (HEMTs)

Abstract

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