Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers

Mohd Sharizal Alias, Paul O. Leisher, Kent D. Choquette, Khairul Anuar, Dominic Siriani, Sufian Mitani, Y. Mohd Razman, A. M. Abdul Fatah

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.

Original languageEnglish (US)
Title of host publicationICSE 2006
Subtitle of host publication2006 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages227-230
Number of pages4
DOIs
StatePublished - 2006
Event2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006 - Kuala Lumpur, Malaysia
Duration: Nov 29 2006Dec 1 2006

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Other

Other2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
CountryMalaysia
CityKuala Lumpur
Period11/29/0612/1/06

ASJC Scopus subject areas

  • Engineering(all)

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