TY - GEN
T1 - Electro-opto characteristics of 850 nm oxide-confined vertical-cavity surface-emitting lasers
AU - Alias, Mohd Sharizal
AU - Leisher, Paul O.
AU - Choquette, Kent D.
AU - Anuar, Khairul
AU - Siriani, Dominic
AU - Mitani, Sufian
AU - Mohd Razman, Y.
AU - Abdul Fatah, A. M.
PY - 2006
Y1 - 2006
N2 - In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.
AB - In this paper, an MOCVD grown of VCSEL with an operating wavelength of 850 nm is fabricated and characterized. The sample includes numerous oxide aperture sizes, allowing a thorough investigation of the electrical and optical characteristics and overall device performance. Low threshold current operation <1mA was achieved for oxide apertures smaller than 10 μm. Analysis of the VCSEL performance as a function of the oxidize aperture sizes is also reported.
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U2 - 10.1109/SMELEC.2006.381053
DO - 10.1109/SMELEC.2006.381053
M3 - Conference contribution
AN - SCOPUS:35148866246
SN - 0780397312
SN - 9780780397316
T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
SP - 227
EP - 230
BT - ICSE 2006
T2 - 2006 IEEE International Conference on Semiconductor Electronics, ICSE 2006
Y2 - 29 November 2006 through 1 December 2006
ER -