Electro-Optical Bistability in Semiconductor Laser

Curtis Wang, Milton Feng, Nick Holonyak

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optical bistability in a single semiconductor transistor laser are realized and demonstrated based on the modulation of cavity photon density via the base quantum-wells for photon-generation and collector intra-cavity photon assisted tunneling for photon-absorption.

Original languageEnglish (US)
Title of host publication2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781943580422
StatePublished - Aug 6 2018
Event2018 Conference on Lasers and Electro-Optics, CLEO 2018 - San Jose, United States
Duration: May 13 2018May 18 2018

Publication series

Name2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings

Other

Other2018 Conference on Lasers and Electro-Optics, CLEO 2018
CountryUnited States
CitySan Jose
Period5/13/185/18/18

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Wang, C., Feng, M., & Holonyak, N. (2018). Electro-Optical Bistability in Semiconductor Laser. In 2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings [8428156] (2018 Conference on Lasers and Electro-Optics, CLEO 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc..