Electro-optic effects in GaAsAlGaAs multiple quantum well structures

Jin Wang, J. P. Leburton

Research output: Contribution to journalArticlepeer-review

Abstract

A theoretical model for the electro-optic effects in GaAsAlGaAs multiple quantum well structures is presented. Electron and hole properties are modeled within a Transfer Matrix Technique which includes the non-parabolocity of the energy bands, and reproduces adequately the onset of quasi-bound states resulting from the influence of the electric field on QW's with finite barrier height. The method is also flexible enough to account for space charge effects in non-uniform potentials. The index of refraction has been calculated for both TE and TM modes in single and double QW structures as a function of electric fields up to 100kV/cm. Our data show noticeable polarization effects in the optical constants which increases with electric fields. In addition, the index of refraction exhibits oscillatory electro-optic effect which is due to a modulation by the electric field, of the overlap between quantized electron and hole states.

Original languageEnglish (US)
Pages (from-to)191-194
Number of pages4
JournalSuperlattices and Microstructures
Volume8
Issue number2
DOIs
StatePublished - 1990

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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