Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si

Keyphrases

• Active Regions 50%
• Broad-area Laser 50%
• Continuous Wave 100%
• Device Layer 50%
• Electrically Pumped 100%
• Epitaxially Grown 100%
• GaAs Quantum Dot 50%
• Germanium 50%
• III-V Semiconductors 50%
• Lasing 50%
• Low Threshold 50%
• Power Output 50%
• Quantum Dot Lasers 100%
• Room Temperature Lasing 50%
• Silicon Layer 50%
• Silicon Substrate 50%
• Threshold Current Density 50%
• Threshold Operation 50%

Physics

• Continuous Radiation 100%
• Flat Surface 100%
• Lasing 100%
• Quantum Dot 100%
• Room Temperature 50%
• Semiconductor Laser 50%