Electrically pumped continuous wave 1.3 μm quantum dot lasers epitaxially grown on on-Axis (001) Si

Alan Y. Liu, Jon Peters, Xue Huang, Tin Komljenovic, Justin Norman, Daehwan Jung, Mike Davenport, Minjoo Larry Lee, Arthur C. Gossard, John E. Bowers

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate 1.3 μm quantum dot lasers grown directly on (001) silicon substrates without offcut or germanium layers, with thresholds down to 30 mA and lasing up to 90°C. Measurements of relative intensity noise versus feedback show 20 dB higher tolerance to reflections compared to quantum well lasers on silicon.

Original languageEnglish (US)
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
StatePublished - Dec 2 2016
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: Sep 12 2016Sep 15 2016

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period9/12/169/15/16

Keywords

  • III-V on Silicon
  • Monolithic Integration
  • Quantum dot lasers
  • Silicon Photonics

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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