@inproceedings{362fcdc8a996474284100062c2b38341,
title = "Electrically pumped continuous wave 1.3 μm quantum dot lasers epitaxially grown on on-Axis (001) Si",
abstract = "We demonstrate 1.3 μm quantum dot lasers grown directly on (001) silicon substrates without offcut or germanium layers, with thresholds down to 30 mA and lasing up to 90°C. Measurements of relative intensity noise versus feedback show 20 dB higher tolerance to reflections compared to quantum well lasers on silicon.",
keywords = "III-V on Silicon, Monolithic Integration, Quantum dot lasers, Silicon Photonics",
author = "Liu, {Alan Y.} and Jon Peters and Xue Huang and Tin Komljenovic and Justin Norman and Daehwan Jung and Mike Davenport and Lee, {Minjoo Larry} and Gossard, {Arthur C.} and Bowers, {John E.}",
note = "Publisher Copyright: {\textcopyright} 2016 IEICE-ES.; 2016 International Semiconductor Laser Conference, ISLC 2016 ; Conference date: 12-09-2016 Through 15-09-2016",
year = "2016",
month = dec,
day = "2",
language = "English (US)",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",
address = "United States",
}