Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si

Alan Y. Liu, Jon Peters, Xue Huang, Daehwan Jung, Justin Norman, Minjoo L. Lee, Arthur C. Gossard, John E. Bowers

Research output: Contribution to journalArticle

Abstract

We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860 A/cm2 and 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA.

Original languageEnglish (US)
Pages (from-to)338-341
Number of pages4
JournalOptics Letters
Volume42
Issue number2
DOIs
StatePublished - Jan 15 2017

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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    Liu, A. Y., Peters, J., Huang, X., Jung, D., Norman, J., Lee, M. L., Gossard, A. C., & Bowers, J. E. (2017). Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si. Optics Letters, 42(2), 338-341. https://doi.org/10.1364/OL.42.000338