Electrically injected InGaAs/GaAs photonic crystal membrane light emitting microcavity with spatially localized gain

Yong K. Kim, Victor C. Elarde, Christopher M. Long, James J. Coleman, Kent D. Choquette

Research output: Contribution to journalArticle

Abstract

Electrically injected photonic crystal membrane light emitting microcavities with spatially localized optical gain are reported. The localization of the InGaAs quantum well inside the defect cavity of the photonic crystal allows for efficient coupling of the optical mode to the gain medium and reduces nonradiative carrier recombination. The use of a buried oxide layer under the semiconductor membrane enables optical and electrical confinement and a submicron diameter oxide aperture provides a current path. Enhancement of the electroluminescence intensity is observed as a result of the spatial localization of the quantum well, and the spectral characteristics at room temperature indicate the photonic crystal microcavity confinement.

Original languageEnglish (US)
Article number123103
JournalJournal of Applied Physics
Volume104
Issue number12
DOIs
StatePublished - Dec 1 2008

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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