Electrical-thermal co-simulation for through silicon via and active tier in 3-D IC

Qiu Min, Shi Yun Zhou, Cheng Zhuo, Jian Ming Jin, Er Ping Li

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An electrical-thermal co-simulation method for through silicon via (TSV) and active tier in 3-D IC is presented in this paper. Based on the thermal-electrical analogy, both steady and transient co-simulation can be performed in frequently-used circuit solver. Accuracy and efficiency of the proposed method are demonstrated by numerical examples, which also show that active tiers have a greater effect on the whole thermal performance.

Original languageEnglish (US)
Title of host publication2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages110
Number of pages1
ISBN (Electronic)9781509059973
DOIs
StatePublished - Jun 22 2018
Event60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018 - Suntec City, Singapore
Duration: May 14 2018May 18 2018

Publication series

Name2018 IEEE International Symposium on Electromagnetic Compatibility and 2018 IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018

Other

Other60th IEEE International Symposium on Electromagnetic Compatibility and 9th IEEE Asia-Pacific Symposium on Electromagnetic Compatibility, EMC/APEMC 2018
Country/TerritorySingapore
CitySuntec City
Period5/14/185/18/18

ASJC Scopus subject areas

  • Aerospace Engineering
  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Radiation

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