Electrical-thermal co-analysis of through silicon via with equivalent circuit model

Qiu Min, Er Ping Li, Cheng Zhuo, Yong Sheng Li, Shi Yun Zhou, Jian Ming Jin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An electrical-thermal co-analysis method for through silicon via using equivalent circuit model is proposed in this paper. The electrical part is based on analytical methods, taking physical effects such as MOS effect, eddy current into consideration. The thermal part is realized by behavior modeling, which enables this method to perform transient analysis besides stationary analysis. The co-analysis can be conveniently conducted using existing electric circuit solvers. Accuracy and efficiency of the proposed method are demonstrated by comparison of simulation results with commercial software.

Original languageEnglish (US)
Title of host publication2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-4
Number of pages4
ISBN (Electronic)9781538612385
DOIs
StatePublished - Jul 2 2017
Event2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2017 - Haining, Zhejiang, China
Duration: Dec 14 2017Dec 16 2017

Publication series

Name2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2017
Volume2018-January

Other

Other2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium, EDAPS 2017
Country/TerritoryChina
CityHaining, Zhejiang
Period12/14/1712/16/17

Keywords

  • 3-D IC
  • electrical-thermal co-analysis
  • equivalent circuit model
  • thermal-electrical analogy
  • through-silicon-via (TSV)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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