Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO2

Cheng Lin Tsai; Albert Liao; Eric Pop; Moonsub Shim

doi:10.1063/1.3622769

Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO₂

Cheng Lin Tsai, Albert Liao, Eric Pop, Moonsub Shim

Research output: Contribution to journal › Article › peer-review

Abstract

Heat dissipation in electrically biased individual semiconducting carbon nanotubes (CNTs) on single crystal quartz and amorphous SiO₂ is examined with temperature profiles obtained by spatially resolved Raman spectroscopy. Despite the differences in phonon velocities, thermal conductivity, and van der Waals interactions with CNTs, on average, heat dissipation into single crystal quartz and amorphous SiO₂ is found to be similar. Large temperature gradients and local hot spots often observed underscore the complexity of CNT temperature profiles and may be accountable for the similarities observed.

Original language	English (US)
Article number	053120
Journal	Applied Physics Letters
Volume	99
Issue number	5
DOIs	https://doi.org/10.1063/1.3622769
State	Published - Aug 1 2011

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3622769

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title = "Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO2",

abstract = "Heat dissipation in electrically biased individual semiconducting carbon nanotubes (CNTs) on single crystal quartz and amorphous SiO2 is examined with temperature profiles obtained by spatially resolved Raman spectroscopy. Despite the differences in phonon velocities, thermal conductivity, and van der Waals interactions with CNTs, on average, heat dissipation into single crystal quartz and amorphous SiO2 is found to be similar. Large temperature gradients and local hot spots often observed underscore the complexity of CNT temperature profiles and may be accountable for the similarities observed.",

author = "Tsai, {Cheng Lin} and Albert Liao and Eric Pop and Moonsub Shim",

note = "Funding Information: This material is based upon work supported in part by the MSD Focus Center, under the Focus Center Research Program (FCRP), a Semiconductor Research Corporation entity, and in part by the NSF grants 09-05175 and CAREER 09-54423. Experiments were carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois.",

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doi = "10.1063/1.3622769",

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T1 - Electrical power dissipation in semiconducting carbon nanotubes on single crystal quartz and amorphous SiO2

AU - Tsai, Cheng Lin

AU - Liao, Albert

AU - Pop, Eric

AU - Shim, Moonsub

N1 - Funding Information: This material is based upon work supported in part by the MSD Focus Center, under the Focus Center Research Program (FCRP), a Semiconductor Research Corporation entity, and in part by the NSF grants 09-05175 and CAREER 09-54423. Experiments were carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois.

PY - 2011/8/1

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N2 - Heat dissipation in electrically biased individual semiconducting carbon nanotubes (CNTs) on single crystal quartz and amorphous SiO2 is examined with temperature profiles obtained by spatially resolved Raman spectroscopy. Despite the differences in phonon velocities, thermal conductivity, and van der Waals interactions with CNTs, on average, heat dissipation into single crystal quartz and amorphous SiO2 is found to be similar. Large temperature gradients and local hot spots often observed underscore the complexity of CNT temperature profiles and may be accountable for the similarities observed.

AB - Heat dissipation in electrically biased individual semiconducting carbon nanotubes (CNTs) on single crystal quartz and amorphous SiO2 is examined with temperature profiles obtained by spatially resolved Raman spectroscopy. Despite the differences in phonon velocities, thermal conductivity, and van der Waals interactions with CNTs, on average, heat dissipation into single crystal quartz and amorphous SiO2 is found to be similar. Large temperature gradients and local hot spots often observed underscore the complexity of CNT temperature profiles and may be accountable for the similarities observed.

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