TY - GEN
T1 - Electrical noise characteristics of a doped silicon microcantilever heater-thermometer
AU - Corbin, Elise A.
AU - King, William Paul
PY - 2010
Y1 - 2010
N2 - We report measurements of the electronic noise characteristics of doped silicon microcantilever heaterthermometers. The noise floor is measured over the range 1 Hz-12 kHz while the cantilever is resistively heated over the temperature range of 297-615 K. At low frequency 1 / f, or flicker, noise is the dominant noise type, while at high frequency the Johnson, or thermal, noise dominates. The Johnson noise floor is found to be less than 10 nV / Hz 1/2, which corresponds to a cantilever temperature precision of about 2-30 μK / Hz1/2 over the temperature range measured. To our knowledge, this paper reports the first detailed measurements of noise in a heated microcantilever sensor.
AB - We report measurements of the electronic noise characteristics of doped silicon microcantilever heaterthermometers. The noise floor is measured over the range 1 Hz-12 kHz while the cantilever is resistively heated over the temperature range of 297-615 K. At low frequency 1 / f, or flicker, noise is the dominant noise type, while at high frequency the Johnson, or thermal, noise dominates. The Johnson noise floor is found to be less than 10 nV / Hz 1/2, which corresponds to a cantilever temperature precision of about 2-30 μK / Hz1/2 over the temperature range measured. To our knowledge, this paper reports the first detailed measurements of noise in a heated microcantilever sensor.
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U2 - 10.1109/ICSENS.2010.5690952
DO - 10.1109/ICSENS.2010.5690952
M3 - Conference contribution
AN - SCOPUS:79951925939
SN - 9781424481682
T3 - Proceedings of IEEE Sensors
SP - 2373
EP - 2376
BT - IEEE Sensors 2010 Conference, SENSORS 2010
T2 - 9th IEEE Sensors Conference 2010, SENSORS 2010
Y2 - 1 November 2010 through 4 November 2010
ER -