Electrical noise characteristics of a doped silicon microcantilever heater-thermometer

Elise A. Corbin; William P. King

doi:10.1063/1.3673279

Electrical noise characteristics of a doped silicon microcantilever heater-thermometer

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Abstract

We measure the electrical noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296-781 K. The dominant noise source is 1/f below about 10 kHz, while at higher frequency, the dominant noise source is Johnson noise. The 1/f noise matches the Hooge model. The noise floor is about 10 nV/Hz ^1/2 and depends upon temperature, matching the theoretical Johnson noise. The Johnson noise-limited temperature resolution is about 1 K/Hz ^1/2.

Original language	English (US)
Article number	263107
Journal	Applied Physics Letters
Volume	99
Issue number	26
DOIs	https://doi.org/10.1063/1.3673279
State	Published - Dec 26 2011

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Physics and Astronomy (miscellaneous)

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10.1063/1.3673279

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title = "Electrical noise characteristics of a doped silicon microcantilever heater-thermometer",

abstract = "We measure the electrical noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296-781 K. The dominant noise source is 1/f below about 10 kHz, while at higher frequency, the dominant noise source is Johnson noise. The 1/f noise matches the Hooge model. The noise floor is about 10 nV/Hz 1/2 and depends upon temperature, matching the theoretical Johnson noise. The Johnson noise-limited temperature resolution is about 1 K/Hz 1/2.",

author = "Corbin, {Elise A.} and King, {William P.}",

note = "Funding Information: We acknowledge the support of Air Force Office of Scientific Research MURI FA9550-08-1-0407 and the DARPA TBN program.",

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N2 - We measure the electrical noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296-781 K. The dominant noise source is 1/f below about 10 kHz, while at higher frequency, the dominant noise source is Johnson noise. The 1/f noise matches the Hooge model. The noise floor is about 10 nV/Hz 1/2 and depends upon temperature, matching the theoretical Johnson noise. The Johnson noise-limited temperature resolution is about 1 K/Hz 1/2.

AB - We measure the electrical noise characteristics of doped silicon microcantilevers during cantilever self-heating over the temperature range 296-781 K. The dominant noise source is 1/f below about 10 kHz, while at higher frequency, the dominant noise source is Johnson noise. The 1/f noise matches the Hooge model. The noise floor is about 10 nV/Hz 1/2 and depends upon temperature, matching the theoretical Johnson noise. The Johnson noise-limited temperature resolution is about 1 K/Hz 1/2.

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Electrical noise characteristics of a doped silicon microcantilever heater-thermometer

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