Abstract
Ohmio contacts based on Ir/Au and Pd/Ir/Au metallisations have been formed on highly doped p-type InGaAs. Their electrical characteristics were measured and compared with those of conventional Ti/Pt/Au ohmic contacts. They were found to have ohmic contact resistance as low as Ti/Pt/Au metallisation but with superior thermal stabilities.
Original language | English (US) |
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Pages (from-to) | 77-78 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 40 |
Issue number | 1 |
DOIs | |
State | Published - Jan 8 2004 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering