Electrical characteristics of Ir/Au and Pd/Ir/Au ohmic contacts on p-InGaAs

J. H. Jang, S. Kim, I. Adesida

Research output: Contribution to journalArticle

Abstract

Ohmio contacts based on Ir/Au and Pd/Ir/Au metallisations have been formed on highly doped p-type InGaAs. Their electrical characteristics were measured and compared with those of conventional Ti/Pt/Au ohmic contacts. They were found to have ohmic contact resistance as low as Ti/Pt/Au metallisation but with superior thermal stabilities.

Original languageEnglish (US)
Pages (from-to)77-78
Number of pages2
JournalElectronics Letters
Volume40
Issue number1
DOIs
StatePublished - Jan 8 2004

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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