Electrical characteristics and lifetimes of microdischarge devices having thin dielectric films of aluminum oxide, boron nitride, or barium titanate

The electrical (V-I) characteristics, radiative efficiencies, and lifetimes of Ni screen/dielectric/Ni microdischarge devices, having overall thicknesses as small as <100 μm and cylindrical microchannels 50-150 μm in diameter, are investigated for Al₂O₃, BN, and BaTiO₃ dielectric films that are 120 or 200 μm, 30 μm, and 5 μm in thickness, respectively. Having dielectrics fabricated by sol-gel processes or colloidal deposition and operated with Ne gas pressures between 300 and 1200 Torr (300K), these devices operate at voltages as low as ∼93 V (100 μm dia. BaTiO₃ device), and exhibit exceptional stability and lifetimes. After 100 h of continuous operation, a Ni screen/30 μm BN/Ni device operating in 700 Torr Ne (static gas fill) at 100 V produces ∼98% of its initial radiant output.