Electrical characteristics and lifetimes of microdischarge devices having thin dielectric films of aluminum oxide, boron nitride, or barium titanate

S. J. Park, James Gary Eden

Research output: Contribution to journalArticlepeer-review

Abstract

The electrical (V-I) characteristics, radiative efficiencies, and lifetimes of Ni screen/dielectric/Ni microdischarge devices, having overall thicknesses as small as <100 μm and cylindrical microchannels 50-150 μm in diameter, are investigated for Al2O3, BN, and BaTiO3 dielectric films that are 120 or 200 μm, 30 μm, and 5 μm in thickness, respectively. Having dielectrics fabricated by sol-gel processes or colloidal deposition and operated with Ne gas pressures between 300 and 1200 Torr (300K), these devices operate at voltages as low as ∼93 V (100 μm dia. BaTiO3 device), and exhibit exceptional stability and lifetimes. After 100 h of continuous operation, a Ni screen/30 μm BN/Ni device operating in 700 Torr Ne (static gas fill) at 100 V produces ∼98% of its initial radiant output.

Original languageEnglish (US)
Pages (from-to)773-775
Number of pages3
JournalElectronics Letters
Volume39
Issue number10
DOIs
StatePublished - May 15 2003

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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