Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Benedict Ofuonye; Jaseun Lee; Minjun Yan; Changwoo Sun; Jian Min Zuo; Ilesanmi Adesida

doi:10.1088/0268-1242/29/9/095005

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Benedict Ofuonye, Jaseun Lee, Minjun Yan, Changwoo Sun, Jian Min Zuo, Ilesanmi Adesida

Research output: Contribution to journal › Article › peer-review

Abstract

High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500.

Original language	English (US)
Article number	095005
Journal	Semiconductor Science and Technology
Volume	29
Issue number	9
DOIs	https://doi.org/10.1088/0268-1242/29/9/095005
State	Published - Sep 1 2014

Keywords

AlGaN/GaN heterostructure
microstructure
Schottky contact
thermal annealing

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry
Condensed Matter Physics

Online availability

10.1088/0268-1242/29/9/095005

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title = "Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures",

abstract = "High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500.",

keywords = "AlGaN/GaN heterostructure, microstructure, Schottky contact, thermal annealing",

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T1 - Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

AU - Ofuonye, Benedict

AU - Lee, Jaseun

AU - Yan, Minjun

AU - Sun, Changwoo

AU - Zuo, Jian Min

AU - Adesida, Ilesanmi

PY - 2014/9/1

Y1 - 2014/9/1

N2 - High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500.

AB - High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500.

KW - AlGaN/GaN heterostructure

KW - microstructure

KW - Schottky contact

KW - thermal annealing

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M3 - Article

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VL - 29

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

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Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Abstract

Keywords

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