Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Benedict Ofuonye, Jaseun Lee, Minjun Yan, Changwoo Sun, Jian-Min Zuo, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

High work-function metals such as Ni, Pt, and Au in the form of multilayer structures, Ni/Au and Ni/Pt/Au, have been investigated as Schottky metallizations on AlGaN/GaN heterostructures under thermal annealing. As-deposited Ni/Pt/Au had slightly higher Schottky barrier height than its Ni/Au counterpart. Schottky barrier heights for Ni/Au diodes on AlGaN/GaN increased by about 20% from 1.02 eV for as-deposited to 1.21 eV after annealing at 500.

Original languageEnglish (US)
Article number095005
JournalSemiconductor Science and Technology
Volume29
Issue number9
DOIs
StatePublished - Sep 1 2014

Keywords

  • AlGaN/GaN heterostructure
  • microstructure
  • Schottky contact
  • thermal annealing

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

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