Abstract
Achieving large scale precise positioning of the vapor-liquid-solid (VLS) nanowires is one of the biggest challenges for mass production of nanowire-based devices. Although there have been many noteworthy progresses in postgrowth nanowire alignment method development over the past few decades, these methods are mostly suitable for low density applications only. For high density applications such as transistors, both high yield and density are required. Here, we report an elastocapillary force-induced nanowire-aligning method that is extremely simple, clean, and can achieve single/multiple nanowire arrays with up to 98.8% yield and submicron pitch between the nanowires.
Original language | English (US) |
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Pages (from-to) | 11177-11184 |
Number of pages | 8 |
Journal | ACS Applied Materials and Interfaces |
Volume | 13 |
Issue number | 9 |
Early online date | Mar 1 2021 |
DOIs | |
State | Published - Mar 10 2021 |
Keywords
- GaAs
- InAs
- alignment
- elastocapillary force
- nanowire
- planar nanowire
ASJC Scopus subject areas
- General Materials Science