Efficient quantum three-dimensional modeling of fully depleted ballistic silicon-on-insulator metal-oxide-semiconductor field-effect-transistors

A quantum mechanical method was developed to calculate ballistic transport in fully-depleted silicon-on-insulator MOSFET devices. The position of the dopant atoms has a significant effect on the resultant device characteristics. Each dopant configurations becomes exceedingly important for quantum simulations. It is observed that the positions of the dopants in the source and the drain cause pools of electron density to form.