Efficient Optical Coupling between III-V Semiconductor and SiNxWaveguides via Heteroepitaxial Integration

Christopher Heidelberger, Cheryl Sorace-Agaskar, Jason J. Plant, Dave Kharas, Reuel B. Swint, Pankul Dhingra, Minjoo L. Lee, Paul W. Juodawlkis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the first reported integration of III-V waveguides (GaAs/Al0.4Ga0.6As) with SiNx waveguides via heteroepitaxial III-V-on-silicon growth. We achieve efficient optical coupling (-2.5 dB loss/transition) at 1550 nm and low threading dislocation density (4times 10{6}{cm}{-2}), suitable for fabrication of high-performance optoelectronic devices.

Original languageEnglish (US)
Title of host publication2021 IEEE Photonics Conference, IPC 2021 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665416016
DOIs
StatePublished - 2021
Event2021 IEEE Photonics Conference, IPC 2021 - Virtual, Online, Canada
Duration: Oct 18 2021Oct 21 2021

Publication series

Name2021 IEEE Photonics Conference, IPC 2021 - Proceedings

Conference

Conference2021 IEEE Photonics Conference, IPC 2021
Country/TerritoryCanada
CityVirtual, Online
Period10/18/2110/21/21

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Atomic and Molecular Physics, and Optics
  • Artificial Intelligence
  • Computer Networks and Communications

Fingerprint

Dive into the research topics of 'Efficient Optical Coupling between III-V Semiconductor and SiNxWaveguides via Heteroepitaxial Integration'. Together they form a unique fingerprint.

Cite this