Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

S. Strite, A. Pelzmann, T. Suski, M. Leszczynski, J. Jun, A. Rockett, Markus Kamp, K. J. Ebeling

Research output: Contribution to journalArticlepeer-review

Abstract

We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N 2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 10 13 cm -2 dose of Zn + ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N 2- The N 2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N 2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressure.

Original languageEnglish (US)
Pages (from-to)8d
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume2
DOIs
StatePublished - 1997

ASJC Scopus subject areas

  • Materials Science(all)

Fingerprint Dive into the research topics of 'Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N<sub>2</sub> overpressure'. Together they form a unique fingerprint.

Cite this