We continue our investigations into the optical activation of Zn-implanted GaN annealed under ever higher N 2 overpressure. The samples studied were epitaxial GaN/sapphire layers of good optical quality which were implanted with a 10 13 cm -2 dose of Zn + ions at 200 keV, diced into equivalent pieces and annealed under 10 kbar of N 2- The N 2 overpressure permitted annealing at temperatures up to 1250°C for 1 hr without GaN decomposition. The blue Zn-related photoluminescence (PL) signal rises sharply with increasing anneal temperature. The Zn-related PL intensity in the implanted sample annealed at 1250°C exceeded that of the epitaxially doped GaN:Zn standard proving that high temperature annealing of GaN under kbar N 2 overpressure can effectively remove implantation damage and efficiently activate implanted dopants in GaN. We propose a lateral LED device which could be fabricated using ion implanted dopants activated by high temperature annealing at high pressure.
|Original language||English (US)|
|Journal||MRS Internet Journal of Nitride Semiconductor Research|
|State||Published - 1997|
ASJC Scopus subject areas
- Materials Science(all)