Efficient multi-die placement for blank defect mitigation in EUV lithography

Yuelin Du, Hongbo Zhang, Martin D F Wong, Yunfei Deng, Rasit O. Topaloglu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Due to the absence of defect-free blanks in extreme ultraviolet (EUV) lithography, defect mitigation is necessary before mass production. One effective way to mitigate the defect impact is to increase the distance between the defects and feature boundaries such that the defects will not affect the printing of the features. Some algorithms have been developed to move the whole layout within the exposure field in order to avoid all defect impact. However, in reality the die size is usually much smaller than the exposure field, such that one blank is packed with multiple copies of the die, and each die can be placed independently within the exposure field. In this paper, we develop an EUV reticle placement algorithm to maximize the number of valid dies that are immune to defects. Given the layout of a die and a defective blank, we first apply a layout relocation algorithm to find all feasible regions for the die on the blank. Then we develop an efficient placement algorithm to place the dies within the feasible regions one at a time until all feasible regions are fully occupied. The simulation results show that our algorithm is able to find a solution efficiently and the number of valid dies placed by our algorithm is very close to the optimal solution.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
DOIs
StatePublished - May 31 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8322
ISSN (Print)0277-786X

Other

OtherExtreme Ultraviolet (EUV) Lithography III
CountryUnited States
CitySan Jose, CA
Period2/13/122/16/12

Fingerprint

Extreme ultraviolet lithography
Extreme Ultraviolet Lithography
blanks
Placement
Die
lithography
Defects
defects
Feasible region
layouts
Layout
Valid
Reticle
relocation
Relocation
Ultraviolet
printing
Printing
Extremes
Optimal Solution

Keywords

  • Blank defect mitigation
  • EUV
  • Multi-die placement

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Du, Y., Zhang, H., Wong, M. D. F., Deng, Y., & Topaloglu, R. O. (2012). Efficient multi-die placement for blank defect mitigation in EUV lithography. In Extreme Ultraviolet (EUV) Lithography III [832231] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322). https://doi.org/10.1117/12.918075

Efficient multi-die placement for blank defect mitigation in EUV lithography. / Du, Yuelin; Zhang, Hongbo; Wong, Martin D F; Deng, Yunfei; Topaloglu, Rasit O.

Extreme Ultraviolet (EUV) Lithography III. 2012. 832231 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Du, Y, Zhang, H, Wong, MDF, Deng, Y & Topaloglu, RO 2012, Efficient multi-die placement for blank defect mitigation in EUV lithography. in Extreme Ultraviolet (EUV) Lithography III., 832231, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8322, Extreme Ultraviolet (EUV) Lithography III, San Jose, CA, United States, 2/13/12. https://doi.org/10.1117/12.918075
Du Y, Zhang H, Wong MDF, Deng Y, Topaloglu RO. Efficient multi-die placement for blank defect mitigation in EUV lithography. In Extreme Ultraviolet (EUV) Lithography III. 2012. 832231. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.918075
Du, Yuelin ; Zhang, Hongbo ; Wong, Martin D F ; Deng, Yunfei ; Topaloglu, Rasit O. / Efficient multi-die placement for blank defect mitigation in EUV lithography. Extreme Ultraviolet (EUV) Lithography III. 2012. (Proceedings of SPIE - The International Society for Optical Engineering).
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