Effects of thin GaAs insertion layer on InAs (InGaAs) InP (001) quantum dots grown by metalorganic chemical vapor deposition

Kwangmin Park; Pilkyung Moon; Eungjin Ahn; Sukwon Hong; Euijoon Yoon; Jeong Won Yoon; Hyeonsik Cheong; Jean Pierre Leburton

doi:10.1063/1.1943494

Effects of thin GaAs insertion layer on InAs (InGaAs) InP (001) quantum dots grown by metalorganic chemical vapor deposition

Kwangmin Park
, Pilkyung Moon
, Eungjin Ahn
, Sukwon Hong
, Euijoon Yoon
, Jeong Won Yoon
, Hyeonsik Cheong
, Jean Pierre Leburton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We studied the influence of a thin GaAs insertion layer (5-10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and 111 meV when they were grown on InGaAs and InP, respectively. In addition, a narrowing of full width at half maximum was observed when the thicker GaAs insertion layers and higher overgrowth temperature for the top capping layer were used. These results can be applied for tuning the emission wavelength around 1.55 μm for optical fiber communication.

Original language	English (US)
Article number	223110
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	22
DOIs	https://doi.org/10.1063/1.1943494
State	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1943494

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title = "Effects of thin GaAs insertion layer on InAs (InGaAs) InP (001) quantum dots grown by metalorganic chemical vapor deposition",

abstract = "We studied the influence of a thin GaAs insertion layer (5-10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and 111 meV when they were grown on InGaAs and InP, respectively. In addition, a narrowing of full width at half maximum was observed when the thicker GaAs insertion layers and higher overgrowth temperature for the top capping layer were used. These results can be applied for tuning the emission wavelength around 1.55 μm for optical fiber communication.",

author = "Kwangmin Park and Pilkyung Moon and Eungjin Ahn and Sukwon Hong and Euijoon Yoon and Yoon, \{Jeong Won\} and Hyeonsik Cheong and Leburton, \{Jean Pierre\}",

note = "This work is supported by the Ministry of Science and Technology through the National Research Laboratory Program, and National R\&D Project for Nano Science and Technology, and by Korea Science and Engineering Foundation through the Quantum Photonic Science Research Center.",

year = "2005",

doi = "10.1063/1.1943494",

language = "English (US)",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Effects of thin GaAs insertion layer on InAs (InGaAs) InP (001) quantum dots grown by metalorganic chemical vapor deposition

AU - Park, Kwangmin

AU - Moon, Pilkyung

AU - Ahn, Eungjin

AU - Hong, Sukwon

AU - Yoon, Euijoon

AU - Yoon, Jeong Won

AU - Cheong, Hyeonsik

AU - Leburton, Jean Pierre

N1 - This work is supported by the Ministry of Science and Technology through the National Research Laboratory Program, and National R&D Project for Nano Science and Technology, and by Korea Science and Engineering Foundation through the Quantum Photonic Science Research Center.

PY - 2005

Y1 - 2005

N2 - We studied the influence of a thin GaAs insertion layer (5-10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and 111 meV when they were grown on InGaAs and InP, respectively. In addition, a narrowing of full width at half maximum was observed when the thicker GaAs insertion layers and higher overgrowth temperature for the top capping layer were used. These results can be applied for tuning the emission wavelength around 1.55 μm for optical fiber communication.

AB - We studied the influence of a thin GaAs insertion layer (5-10 monolayers) on the optical properties of InAs QDs grown by metalorganic chemical vapor deposition. The insertion of a 10 monolayer (ML) thick GaAs layer on the InAs QDs led to significant photoluminescence blueshifts of 54 and 111 meV when they were grown on InGaAs and InP, respectively. In addition, a narrowing of full width at half maximum was observed when the thicker GaAs insertion layers and higher overgrowth temperature for the top capping layer were used. These results can be applied for tuning the emission wavelength around 1.55 μm for optical fiber communication.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

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ER -

Effects of thin GaAs insertion layer on InAs (InGaAs) InP (001) quantum dots grown by metalorganic chemical vapor deposition

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