Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes

Keyphrases

• Substrate Effect 100%
• Substrate Orientation 100%
• Resonant Tunneling Diode 100%
• III-nitrides 100%
• Substrate Quality 100%
• Negative Differential Resistance 57%
• Room Temperature 28%
• Double Barrier 28%
• Material Quality 28%
• Resistance Characteristics 28%
• Aluminum Content 28%
• Polarization Field 28%
• Metal-organic Chemical Vapor Deposition (MOCVD) 14%
• Active Layer 14%
• Material Effect 14%
• Surface Roughness 14%
• N-GaN 14%
• Dislocation Density 14%
• AlGaN-GaN 14%
• Aluminum Gallium Nitride (AlGaN) 14%
• C-plane 14%
• Polar Plane 14%
• Lateralized Overgrowth 14%
• Dislocation Field 14%
• Diode Structures 14%
• Low Dislocation Density 14%
• Freestanding GaN Substrate 14%
• M-plane 14%
• GaN Template 14%
• Surface Dislocations 14%
• Double Polarization 14%
• Roughness Density 14%

Material Science

• Density 100%
• Aluminum 100%
• Nitride Compound 100%
• Metal-Organic Chemical Vapor Deposition 50%
• Surface Roughness 50%
• Aluminum Nitride 50%

Engineering

• Nitride 100%
• Resonant Tunneling 100%
• Negative Differential Resistance 57%
• Room Temperature 28%
• Material Quality 28%
• Dislocation Density 28%
• Resistance Characteristic 28%
• Polarization Field 28%
• Active Layer 14%
• Metal Organic Chemical Vapor Deposition 14%