Effects of substrate quality and orientation on the characteristics of III-nitride resonant tunneling diodes

Z. Vashaei, C. Bayram, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al(Ga)N/GaN resonant tunneling diodes (RTDs) are grown by metal-organic chemical vapor deposition. The effects of material quality on room temperature negative differential resistance (NDR) behaviour of RTDs are investigated by growing the RTD structure on AlN, GaN, and lateral epitaxial overgrowth GaN templates. This reveals that NDR characteristics of RTDs are very sensitive to material quality (such as surface roughness and dislocations density). The effects of the aluminum content of AlGaN double barriers (DB) and polarization fields on NDR characteristic of AlGaN/GaN RTDs were also investigated by employing low dislocation density c-plane (polar) and m-plane (nonpolar) freestanding GaN substrates. Lower aluminum content in the DB RTD active layer and minimization of dislocations and polarization fields enabled a more reliable and reproducible NDR behaviour at room temperature.

Original languageEnglish (US)
Title of host publicationQuantum Sensing and Nanophotonic Devices VIII
DOIs
StatePublished - May 13 2011
Externally publishedYes
EventQuantum Sensing and Nanophotonic Devices VIII - San Francisco, CA, United States
Duration: Jan 23 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7945
ISSN (Print)0277-786X

Other

OtherQuantum Sensing and Nanophotonic Devices VIII
CountryUnited States
CitySan Francisco, CA
Period1/23/111/27/11

Keywords

  • Freestanding GaN substrate
  • GaN
  • metal-organic chemical vapor deposition
  • resonant tunneling diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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