@article{b23c5d90ef3945b298b4359bbb8ef2dd,
title = "Effects of solution-grown CdS on Cu (InGa) Se2 grain boundaries",
abstract = "Complete Cu (In,Ga) Se2 (CIGS) solar cells in which the collecting heterojunctions were formed by chemical bath deposition of CdS were analyzed by transmission electron microscopy and energy dispersive spectroscopy. The CIGS was produced at 400 or 580 °C as either single layers or in a two-step bilayer process. The compositions of grain boundaries were found to be the same as the grains before CdS deposition except in the low temperature-deposited bilayer but after CdS was formed the grain boundaries were found to be anion deficient with some evidence of Cu loss from the CIGS and residual Cu found in the CdS in most cases. The results are consistent with n-type doping of the surface of the CIGS and wrapping of the junction around the grains. In bilayer films the grain boundaries were found to be more open containing many voids and this facilitated penetration of the CdS into the boundaries.",
author = "C. Lei and M. Duch and Robertson, {I. M.} and A. Rockett",
note = "Funding Information: The authors gratefully acknowledge W. N. Shafarman of the University of Delaware IEC for samples analyzed here and many useful discussions. The authors gratefully acknowledge financial support of this research. At the beginning of the project the program was supported by the Office of Basic Energy Sciences under Contract No. DEFG02-91ER45439. ILLINIOIS characterization of solar cell materials was also supported during the initial stage of this investigation through the National Renewable Energy Laboratory Contract No. ADJ-2-30630-26. The completion of the study was supported by the National Science Foundation under Award No. 0602938-0017756000 Materials World Network. The authors thank all of the staff of the University of Illinois Center for Microanalysis of Materials for their invaluable help without which this research could not have been accomplished.",
year = "2010",
month = dec,
day = "1",
doi = "10.1063/1.3512966",
language = "English (US)",
volume = "108",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",
}