EFFECTS OF RELATIVE DAMAGE, FERMI ENERGY AND ANNEALING TECHNIQUE IN ION IMPLANTED GaAs.

H. Kanber, M. Feng, J. M. Whelan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Institute of Physics Conference Series
Publisher	Inst of Physics
Pages	605-612
Number of pages	8
Edition	65
ISBN (Print)	085498156X
State	Published - 1983
Externally published	Yes

Name	Institute of Physics Conference Series
Number	65
ISSN (Print)	0373-0751

ASJC Scopus subject areas

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title = "EFFECTS OF RELATIVE DAMAGE, FERMI ENERGY AND ANNEALING TECHNIQUE IN ION IMPLANTED GaAs.",

author = "H. Kanber and M. Feng and Whelan, {J. M.}",

year = "1983",

language = "English (US)",

isbn = "085498156X",

series = "Institute of Physics Conference Series",

publisher = "Inst of Physics",

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booktitle = "Institute of Physics Conference Series",

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AU - Feng, M.

AU - Whelan, J. M.

PY - 1983

Y1 - 1983

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M3 - Conference contribution

AN - SCOPUS:0020884018

SN - 085498156X

T3 - Institute of Physics Conference Series

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EP - 612

BT - Institute of Physics Conference Series

PB - Inst of Physics

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