Effects of reactive ion etching on the electrical properties of n-GaN surfaces

Keyphrases

• Current-voltage Measurements 50%
• Dry Etching 50%
• Electrical Properties 100%
• Etching Damage 50%
• Forward Characteristics 50%
• GaN Surface 100%
• Height Factor 50%
• Ideality Factor 50%
• N-GaN 100%
• Reactive Ion Etching 100%
• Reverse Characteristics 50%
• Schottky Barrier Height 50%
• Schottky Diode 50%
• Self-bias Voltage 100%
• SiCl4 50%

Material Science

• Reactive Ion Etching 100%
• Schottky Barrier 50%
• Schottky Diode 50%