@inproceedings{9a40527e476948a4a6cd080a3198969b,
title = "Effects of reactive ion etching on phonon-electron interactions in InAlAs-InGaAs modulation-doped field-effect transistor structures studied by raman scattering",
abstract = "Raman Scattering by coupled longitudinal optic phonos and two-dimensional electron gas electrons in In0.52Al0.48 As-In0.53GFa0.47As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified for the first time in InGaAs-based systems. HBr-based reactive ion etching has been performed on these structures, and the effects have been correlated with etch time and bias voltage for structures with different cap layer thicknesses.",
author = "Maslar, {J. E.} and Dorsten, {J. F.} and Bohn, {P. W.} and S. Agarwala and I. Adesida and C. Caneau and R. Bhat",
year = "1994",
language = "English (US)",
isbn = "1558992251",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "377--382",
booktitle = "Growth, Processing, and Characterization of Semiconductor Heterostructures",
note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 29-11-1993 Through 03-12-1993",
}