Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition

Joshua D. Wood, Scott W. Schmucker, Austin S. Lyons, Eric Pop, Joseph W. Lyding

Research output: Contribution to journalArticle

Abstract

Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.

Original languageEnglish (US)
Pages (from-to)4547-4554
Number of pages8
JournalNano letters
Volume11
Issue number11
DOIs
StatePublished - Nov 9 2011

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Graphite
Graphene
Chemical vapor deposition
graphene
vapor deposition
flat surfaces
Substrates
Monolayers
Crystallography
Growth temperature
Electron diffraction
crystallography
Raman spectroscopy
Grain boundaries
Nucleation
roughness
grain boundaries
Surface roughness
nucleation
engineering

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. / Wood, Joshua D.; Schmucker, Scott W.; Lyons, Austin S.; Pop, Eric; Lyding, Joseph W.

In: Nano letters, Vol. 11, No. 11, 09.11.2011, p. 4547-4554.

Research output: Contribution to journalArticle

Wood, Joshua D. ; Schmucker, Scott W. ; Lyons, Austin S. ; Pop, Eric ; Lyding, Joseph W. / Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. In: Nano letters. 2011 ; Vol. 11, No. 11. pp. 4547-4554.
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