Abstract
Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4547-4554 |
| Number of pages | 8 |
| Journal | Nano letters |
| Volume | 11 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 9 2011 |
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ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition. / Wood, Joshua D.; Schmucker, Scott W.; Lyons, Austin S.; Pop, Eric; Lyding, Joseph W.
In: Nano letters, Vol. 11, No. 11, 09.11.2011, p. 4547-4554.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effects of polycrystalline Cu substrate on graphene growth by chemical vapor deposition
AU - Wood, Joshua D.
AU - Schmucker, Scott W.
AU - Lyons, Austin S.
AU - Pop, Eric
AU - Lyding, Joseph W.
PY - 2011/11/9
Y1 - 2011/11/9
N2 - Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.
AB - Chemical vapor deposition of graphene on Cu often employs polycrystalline Cu substrates with diverse facets, grain boundaries (GBs), annealing twins, and rough sites. Using scanning electron microscopy (SEM), electron-backscatter diffraction (EBSD), and Raman spectroscopy on graphene and Cu, we find that Cu substrate crystallography affects graphene growth more than facet roughness. We determine that (111) containing facets produce pristine monolayer graphene with higher growth rate than (100) containing facets, especially Cu(100). The number of graphene defects and nucleation sites appears Cu facet invariant at growth temperatures above 900 °C. Engineering Cu to have (111) surfaces will cause monolayer, uniform graphene growth.
UR - http://www.scopus.com/inward/record.url?scp=80755142865&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80755142865&partnerID=8YFLogxK
U2 - 10.1021/nl201566c
DO - 10.1021/nl201566c
M3 - Article
C2 - 21942318
AN - SCOPUS:80755142865
VL - 11
SP - 4547
EP - 4554
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 11
ER -