@article{7b4560fc94c243fd91ca1ff24dfcb76a,
title = "Effects of point defects on thermal and thermoelectric properties of InN",
abstract = "In contrast to most semiconductors, electrical conductivity of InN is known to increase upon high-energy particle irradiation. The effects of irradiation on its thermal and thermoelectric properties have yet to be investigated. Here we report the thermal conductivity of high-quality InN to be 120 W/m K and examine the effects of point defects generated by irradiation on the thermal conductivity and Seebeck coefficient. We show that irradiation can be used to modulate the thermal and thermoelectric properties of InN by controlling point defect concentrations. The thermoelectric figure of merit of InN was found to be insensitive to irradiation.",
author = "Levander, {A. X.} and T. Tong and Yu, {K. M.} and J. Suh and D. Fu and R. Zhang and H. Lu and Schaff, {W. J.} and O. Dubon and W. Walukiewicz and Cahill, {D. G.} and J. Wu",
note = "Funding Information: The materials processing and data analysis in this work were supported by the National Science Foundation (NSF) under Grant No. CBET-0932905. The irradiation work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. A.L. acknowledges a NSF graduate research fellowship. The TDTR measurement was supported by the Air Force Office of Scientific Research MURI Grant No. FA9550-08-1-0407. D. Fu and R. Zhang acknowledge support by Special Funds for Major State Basic Research Project of China (Grant No. 2011CB301901).",
year = "2011",
month = jan,
day = "3",
doi = "10.1063/1.3536507",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",
}