Highly sensitive electrical response of carbon nanotubes to UV exposure and thermal treatments are examined. Low intensity UV-induced conductivity change in individual single-walled carbon nanotube transistors is found to be mainly arising from oxygen desorption at the metal contacts rather than from nanotubes or possible amorphous side products. Choice of metal or thermal annealing (which changes the metal-nanotube contacts) eliminates or minimizes this low intensity UV response. However, a slow p-doping process is observed upon thermal annealing followed by equilibration in O2 or air as suggested by changes in the near infrared spectra of nanotube films and in individual nanotube transport characteristics.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 2005|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics