Effects of ion implantation and temperature on radiation-induced segregation in Ni-9Al alloys

M. J. Giacobbe, N. Q. Lam, P. R. Okamoto, N. J. Zaluzec, J. F. Stubbins

Research output: Contribution to journalConference articlepeer-review


The effects of Ne and Sc implantation on radiation-induced segregation (RIS) in Ni-9 at.%Al were studied in-situ utilizing the high-voltage electron microscope/Tandem accelerator facility at Argonne National Laboratory. A highly-focused 900-keV electron beam generated radial defect fluxes which, in turn, induced the transport of Al atoms toward the center of the electron-irradiated area via the inverse-Kirkendall effect. The radial segregation rate of Al atoms was monitored by measuring the diameter of the γ-Ni3Al zone which formed in the Al-enriched area during irradiation. Ne and Sc implantation effects on RIS were investigated at 550 °C, while Ne effects were also examined at 625 °C to determine the influence of temperature on the ability of Ne to act as defect trapping sites, causing RIS suppression. It was found that the RIS suppression effect of Ne increased with increasing irradiation temperature, and that Sc had a small RIS suppression effect which increased with increasing Sc implantation dose. Ne bubbles which formed during implantation are believed to be responsible for its strong suppression effect.

Original languageEnglish (US)
Pages (from-to)551-556
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: Dec 2 1996Dec 5 1996

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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