Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering

Jeffrey J. Letcher; Kwangu Kang; David G. Cahill; Dana D. Dlott

doi:10.1063/1.2749728

Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering

Jeffrey J. Letcher, Kwangu Kang, David G. Cahill, Dana D. Dlott

Research output: Contribution to journal › Article › peer-review

Abstract

The relaxation times T ₁ of nonequilibrium populations of elementary excitations in Si are studied by time-resolved Raman scattering using a subpicosecond pump-probe method. Incoherent anti-Stokes Raman scattering is used to monitor the decay of the nonequilibrium populations of holes and the generation and decay of zone-center longitudinal optical (LO) phonons. At lower levels of laser excitation, hole and LO phonon T ₁ lifetimes are less than 0.2 ps and greater than 1.6 ps, respectively. At higher laser intensities, the lifetime of holes increases and the lifetime of LO phonons decrease toward a common value of T ₁ ∼ 0.4 ps.

Original language	English (US)
Article number	252104
Journal	Applied Physics Letters
Volume	90
Issue number	25
DOIs	https://doi.org/10.1063/1.2749728
State	Published - 2007

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Physics and Astronomy (miscellaneous)

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10.1063/1.2749728

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title = "Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering",

abstract = "The relaxation times T 1 of nonequilibrium populations of elementary excitations in Si are studied by time-resolved Raman scattering using a subpicosecond pump-probe method. Incoherent anti-Stokes Raman scattering is used to monitor the decay of the nonequilibrium populations of holes and the generation and decay of zone-center longitudinal optical (LO) phonons. At lower levels of laser excitation, hole and LO phonon T 1 lifetimes are less than 0.2 ps and greater than 1.6 ps, respectively. At higher laser intensities, the lifetime of holes increases and the lifetime of LO phonons decrease toward a common value of T 1 ∼ 0.4 ps.",

author = "Letcher, {Jeffrey J.} and Kwangu Kang and Cahill, {David G.} and Dlott, {Dana D.}",

note = "Funding Information: This research was supported by the U.S. Department of Energy Grant No. DEFG02-91-ER45439. Experiments were carried out in the Laser and Spectroscopy Laboratory of the Materials Research Laboratory at the University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.",

year = "2007",

doi = "10.1063/1.2749728",

language = "English (US)",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering

AU - Letcher, Jeffrey J.

AU - Kang, Kwangu

AU - Cahill, David G.

AU - Dlott, Dana D.

N1 - Funding Information: This research was supported by the U.S. Department of Energy Grant No. DEFG02-91-ER45439. Experiments were carried out in the Laser and Spectroscopy Laboratory of the Materials Research Laboratory at the University of Illinois, which is partially supported by the U.S. Department of Energy under Grant No. DEFG02-91-ER45439.

PY - 2007

Y1 - 2007

N2 - The relaxation times T 1 of nonequilibrium populations of elementary excitations in Si are studied by time-resolved Raman scattering using a subpicosecond pump-probe method. Incoherent anti-Stokes Raman scattering is used to monitor the decay of the nonequilibrium populations of holes and the generation and decay of zone-center longitudinal optical (LO) phonons. At lower levels of laser excitation, hole and LO phonon T 1 lifetimes are less than 0.2 ps and greater than 1.6 ps, respectively. At higher laser intensities, the lifetime of holes increases and the lifetime of LO phonons decrease toward a common value of T 1 ∼ 0.4 ps.

AB - The relaxation times T 1 of nonequilibrium populations of elementary excitations in Si are studied by time-resolved Raman scattering using a subpicosecond pump-probe method. Incoherent anti-Stokes Raman scattering is used to monitor the decay of the nonequilibrium populations of holes and the generation and decay of zone-center longitudinal optical (LO) phonons. At lower levels of laser excitation, hole and LO phonon T 1 lifetimes are less than 0.2 ps and greater than 1.6 ps, respectively. At higher laser intensities, the lifetime of holes increases and the lifetime of LO phonons decrease toward a common value of T 1 ∼ 0.4 ps.

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Effects of high carrier densities on phonon and carrier lifetimes in Si by time-resolved anti-Stokes Raman scattering

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