TY - JOUR
T1 - Effects of high B-doping on Si(001) dangling bond densities, H desorption and film growth kinetics during gas-source molecular beam epitaxy
AU - Glass, G.
AU - Kim, H.
AU - Sardela, M. R.
AU - Lu, Q.
AU - Carlsson, J. R.A.
AU - Abelson, J. R.
AU - Greene, J. E.
N1 - Funding Information:
The authors acknowledge the financial support of the Office of Naval Research through contracts NOOO 14-92-J-1649 and 14-96-0280, administered by Drs. A1 Goodman and Larry Cooper, and the Semiconductor Research Corporation. J.R.A.C. was supported by a Fellowship from the Swedish
PY - 1997/12
Y1 - 1997/12
N2 - Si(001) layers doped with B concentrations CB ranging from 5 x 1016 to 2 x 1021 cm-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 1020 cm-3. With increasing incident flux ratios JB2H6/JSi2H6≥0.01 (corresponding to CB = 2 x 1019 cm-3), film growth rates decreased at Ts≥600°C, but increased at Ts≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing CB show strong B surface segregation, decreased steady-state H coverages θH, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θH values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in RSi, whereas at higher temperatures RSi decreases due to the decreased adsorption-site density.
AB - Si(001) layers doped with B concentrations CB ranging from 5 x 1016 to 2 x 1021 cm-3 were grown on Si(001)-(2 x 1) substrates by gas-source molecular beam epitaxy using Si2H6 and B2H6. B was incorporated into substitutional electrically active sites at concentrations up to 2.5 x 1020 cm-3. With increasing incident flux ratios JB2H6/JSi2H6≥0.01 (corresponding to CB = 2 x 1019 cm-3), film growth rates decreased at Ts≥600°C, but increased at Ts≤550°C. Deuterium temperature-programmed desorption measurements as a function of increasing CB show strong B surface segregation, decreased steady-state H coverages θH, and lower dangling bond densities. The Si:B growth kinetics are well described by a model showing that at low temperatures, where steady-state θH values are high, increased H desorption rates from B-backbonded Si adatoms dominate, leading to an enhancement in RSi, whereas at higher temperatures RSi decreases due to the decreased adsorption-site density.
KW - Boron
KW - Chemical vapor deposition
KW - Models of surface chemical reactions
KW - Models of surface kinetics
KW - Semi-empirical models and model calculations
KW - Semiconductor-semiconductor thin film structures
KW - Silicon
KW - Single crystal epitaxy
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U2 - 10.1016/S0039-6028(97)00708-5
DO - 10.1016/S0039-6028(97)00708-5
M3 - Article
AN - SCOPUS:0031360666
SN - 0039-6028
VL - 392
SP - L63-L68
JO - Surface Science
JF - Surface Science
IS - 1-3
ER -