Abstract
In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 450-456 |
| Number of pages | 7 |
| Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
| Volume | 18 |
| Issue number | 2 |
| DOIs | |
| State | Published - Mar 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films