Effects of growth temperature on Mg-doped GaN epitaxial films grown by plasma-assisted molecular beam epitaxy

J. M. Myoung, Kyekyoon Kim

Research output: Contribution to journalArticle

Abstract

In this study, p-type GaN films were grown by plasma assisted molecular beam epitaxy (PAMBE) at temperatures between 650°C and 700°C using Mg without postgrowth treatment. Growth temperature was found to be a critical parameter determining the surface morphology, crystallinity, and electrical properties of the resulting film. The concentration of Mg incorporated into the film increased with increasing growth temperature.

Original languageEnglish (US)
Pages (from-to)450-456
Number of pages7
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume18
Issue number2
DOIs
StatePublished - Mar 1 2000

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this