@inproceedings{07800af177754b22ba511df106c1ae80,
title = "Effects of Graded Buffer Design and Active Region Structure on GaAsP Single-Junction Solar Cells Grown on GaP/Si Templates",
abstract = "We investigated the effect of GaAsyP1-y graded buffer layer design and cell structure on GaAsP solar cells grown on GaP/Si templates. Heavy Si doping in the graded buffer layer increases threading dislocation density (TDD) by 2.7× compared to no doping, while heavy Be doping has little or no effect on TDD. Higher TDD increases the bandgap-voltage offset, but its effect on short-circuit current density is more complex. For example, by implementing an n+/i/p structure in cells with elevated TDD, we could obtain significantly higher internal quantum efficiencies at 500-750 nm compared to n+/p structures with low TDD. All cells investigated here achieved efficiencies of 15.5-15.9% despite TDD values ranging from 4.5×106-1.2×107 cm-2.",
keywords = "EBIC, GaAsP, TDD, graded buffer, n+/i/p",
author = "Shizhao Fan and Hool, {Ryan D.} and Pankul Dhingra and Mijung Kim and Ratta, {Erik D.} and Li, {Brian D.} and Yukun Sun and Yu, {Zhengshan J.} and Holman, {Zachary C.} and Lee, {Minjoo L.}",
note = "Funding Information: 1509864. R. D. Hool and B. D. Li were supported by National Aeronautics Funding Information: and Space Administration (NASA) Space Technology Research Fellowships 978-1-7281-6115-0/20/$31.00 {\textcopyright}2020 IEEE under Grants No. 80NSSC18K1171 and 80NSSC19K1174, respectively. Publisher Copyright: {\textcopyright} 2020 IEEE.; 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 ; Conference date: 15-06-2020 Through 21-08-2020",
year = "2020",
month = jun,
day = "14",
doi = "10.1109/PVSC45281.2020.9300775",
language = "English (US)",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "2044--2046",
booktitle = "2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020",
address = "United States",
}