Effects of crystallographic orientations on the charging time in silicon nanocrystal flash memories

J. S. De Sousa, J. P. Leburton, A. V. Thean, V. N. Freire, E. F. Da Silva

Research output: Contribution to journalArticlepeer-review

Abstract

The effects of crystallographic orientations on the charging time in silicon nanocrystal flash memories were discussed. The Bardeen's transfer formalism within a Schrodinger-Poisson scheme was used for the investigation. It was found that crystallographic orientations strongly affected the electronic structure by changing the symmetry of the wave functions and level degeneracy.

Original languageEnglish (US)
Pages (from-to)2685-2687
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number16
DOIs
StatePublished - Apr 21 2003

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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