Effects of annealing on the performance of InP/InGaAs HBTs grown by LP-MOCVD

Keyphrases

• Annealing 100%
• InGaAs 100%
• DC Current Gain 100%
• Annealing Effect 100%
• Low Temperature 50%
• Rapid Thermal Annealing 50%
• Hole Concentration 50%
• Device Performance 50%
• Annealing Time 50%
• Carbon-doped 50%
• Base Resistance 50%
• Current Gain Cutoff Frequency 50%
• Heterojunction Bipolar Transistors 50%
• Sheet Resistance 50%
• Hydrogen Concentration 50%
• Maximum Oscillation Frequency 50%

Engineering

• Indium Gallium Arsenide 100%
• Current Gain 100%
• Low-Temperature 33%
• Heterojunctions 33%
• Annealing Time 33%
• Device Performance 33%
• Bipolar Transistor 33%
• Sheet Resistance 33%
• Cutoff Frequency 33%
• Rapid Thermal Annealing 33%
• Hole Concentration 33%